Lectures
- 1. Fundamental concepts
- 2. Intrinsic, extrinsic semiconductors
- 3. Carrier statistics in semiconductors
- 4. Generation and recombination mechanisms
- 5. Generation and recombination rates outside equilibrium
- 6. Carrier dynamics
- 7. Drift, diffusion, transit time
- 8. Non-uniform doping distribution
- 9. Quasi-Fermi levels
- 10. Shockley equations
- 11. Minority-carrier type situations
- 12. Minority-carrier dynamics
- 13. PN junction: electrostatics
- 14. PN junction: depletion capacitance
- 15. PN junction: carrier storage
- 16. PN junction dynamics
- 17. Metal-semiconductor junction electrostatics
- 18. Metal semiconductor junction I-V characteristics
- 19. Schottky diode
- 20. Ideal semiconductor surface
- 21. Metal-oxide-semiconductor (MOS) in equilibrium
- 22. MOS outside equilibrium
- 23. Simplifications to Poisson-Boltzmann formulation
- 24. Dynamics of MOS structure
- 25. Inversion layer transport
- 26. Long-channel metal-oxide-semiconductor field-effect (MOSFET)
- 27. Body effect, back bias
- 28. Channel-length modulation
- 29. C-V characteristics
- 30. Short-channel MOSFET
- 31. MOSFET short-channel effects
- 32. MOSFET scaling
- 33. Evolution of MOSFET design
- 34. Bipolar junction transistor (BJT) intro
- 35. BJT I-V characteristics in forward-active
- 36. Other regimes of operation of BJT
- 37. BJT C-V characteristics
- 38. BJT high-frequency characteristics
- 39. BJT non-ideal effects
Integrated Microelectronic Devices
Course Summary
This course is based on 6.720J / 3.43J Integrated Microelectronic Devices, Spring 2007 made available by Massachusetts Institute of Technology: MIT OpenCourseWare under the Creative Commons BY-NC-SA license.
This course examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined.
Reading Material
1. Integrated Microelectronic Devices: Physics and Modelingdel Alamo, Jesús A. Integrated Microelectronic Devices: Physics and Modeling. Prentice Hall, 2009. ISBN: 9780131415096
