Lectures
- 1. Fundamental concepts
- 2. Intrinsic, extrinsic semiconductors
- 3. Carrier statistics in semiconductors
- 4. Generation and recombination mechanisms
- 5. Generation and recombination rates outside equilibrium
- 6. Carrier dynamics
- 7. Drift, diffusion, transit time
- 8. Non-uniform doping distribution
- 9. Quasi-Fermi levels
- 10. Shockley equations
- 11. Minority-carrier type situations
- 12. Minority-carrier dynamics
- 13. PN junction: electrostatics
- 14. PN junction: depletion capacitance
- 15. PN junction: carrier storage
- 16. PN junction dynamics
- 17. Metal-semiconductor junction electrostatics
- 18. Metal semiconductor junction I-V characteristics
- 19. Schottky diode
- 20. Ideal semiconductor surface
- 21. Metal-oxide-semiconductor (MOS) in equilibrium
- 22. MOS outside equilibrium
- 23. Simplifications to Poisson-Boltzmann formulation
- 24. Dynamics of MOS structure
- 25. Inversion layer transport
- 26. Long-channel metal-oxide-semiconductor field-effect (MOSFET)
- 27. Body effect, back bias
- 28. Channel-length modulation
- 29. C-V characteristics
- 30. Short-channel MOSFET
- 31. MOSFET short-channel effects
- 32. MOSFET scaling
- 33. Evolution of MOSFET design
- 34. Bipolar junction transistor (BJT) intro
- 35. BJT I-V characteristics in forward-active
- 36. Other regimes of operation of BJT
- 37. BJT C-V characteristics
- 38. BJT high-frequency characteristics
- 39. BJT non-ideal effects
Integrated Microelectronic Devices - Lecture 35
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Lecture 35 - BJT I-V characteristics in forward-active
BJT I-V characteristics in forward-active
Prof. Jesús Del Alamo, Prof. Harry Tuller
6.720J / 3.43J Integrated Microelectronic Devices, Spring 2007 (Massachusetts Institute of Technology: MIT OpenCourseWare) http://ocw.mit.edu Date accessed: 2009-09-12 License: Creative Commons BY-NC-SA |
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